Wafer Separation.

Wafers can be held apart, separated by up to 30mm, opening up process possibilities and providing a number of advantages.

Rapid and effective outgassing of the wafers and any cavities - particularly important where vacuum-encapsulation or gas-encapsulation is required.

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INDEPENDENT HEATING
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EFFICIENT OUTGASSING
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RADICAL ACTIVATION
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IN-SITU CHEMISTRY
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MULTI STACK BONDING

The wafer separation is achieved by employing a fully automatic 4-axis manipulator where the Z drive provides up to a 30mm gap and applies up to 40kN contact forces.

The large separation allows independent heating of the upper and lower wafers allowing, for instance, getter activation at a higher temperature while keeping the other wafer cool.

Other benefits.

In-situ chemistry is also available with surface activation, reliable pressure control and vapour injection for oxide removal. 

Bonding of thick wafers or a stack of wafers up to 30mm is possible.

Did you know?

A large temperature differential between the wafers of up to 350°C can be achieved.

Vapour Injection