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More About Tony:
After retiring in 2021 from his role as Technical Director, Tony devoted himself to his other passions and embraced writing and performing his poetry and music.
To us, Tony was far more than a colleague or founder – he was a mentor, an inspiration, and a friend. His inquisitive mind was matched by rare compassion, humility, selflessness, and genuine kindness. He taught us that nothing is impossible and that, at least in science, there is always a solution waiting to be found.
Through years of shared projects, countless discussions, and an open exchange of ideas, Tony helped shape not only our professional paths but our personal growth. His trust, guidance, encouragement, and belief in us will always be remembered with gratitude.
Tony will be deeply missed – not only for what he knew, but for who he was. His legacy lives on in the technologies he created and in all of us who will continue to build upon the exceptional foundation he established.
We extend our deepest condolences to Tony’s family and friends.
Thick wafer bonding and multi stack wafer bonding is possible, accommodating up to 30mm thick stacks.
Various chemistries can be introduced into the chamber using either vapour injection system (DI water or acid) or pressure control system (gas). Wafers held in separation can be treated just before contact, for example for Copper oxide removal.
Large wafer separation allows more effective evacuation of the space between the wafers. All surfaces of cavities can be efficiently outgassed while the wafers are heated. It is particularly important for vacuum or gas encapsulation.
Upper and lower wafers can be heated independently to different temperatures and with different ramp rates. The differential temperature can be as high as 350°C (depending on options). This feature can be useful for processes where one wafer needs outgassing while the other one has to stay cold or for activating the getter on one wafer.